Double D-centers related donor-acceptor-pairs emission in fluorescent silicon carbide

Fluorescent silicon carbide as an ultraviolet-to-visible light converter by control of donor to acceptor recombinations

Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC

In the present work, we investigated donor-acceptor-pair emission in N-B doped fluorescent 6H-SiC, by means of photoluminescence, Raman spectroscopy, and angle-resolved photoluminescence. The photoluminescence results were interpreted by using a band diagram with Fermi-Dirac statistics. It is shown that with N and B concentrations in a range of 1018 cm−3 the samples exhibit the most intense lum...

Formation rates of iron-acceptor pairs in crystalline silicon

The characteristic association time constant describing the formation of iron-acceptor pairs in crystalline silicon has been measured for samples of various p-type dopant concentrations and species B, Ga, and In near room temperature. The results show that the dopant species has no impact on the pairing kinetics, suggesting that the pairing process is entirely limited by iron diffusion. This co...

Oxygen incorporation in thermal-donor centers in silicon.

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Ionization energy of the phosphorus donor in 3C-SiC from the donor-acceptor pair emission